Transistor BJT BU508AFI ST

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Transistor BJT BU508AFI ST
Descrizione

Mounting Style: SMD / SMT
Package / Enclosure: SOT-93-3
Transistor Polar: NPN
Configuration: Single
VCEO Max Collector-Emitter Voltage: 700 V
VEBO emitter-base voltage: 10 V
Maximum DC collector current: 8 A
Product gain-bandwidth fT: 7 MHz
Minimum working temperature: - 65 C
Maximum working temperature: + 150 C
Series: BU508AF

Height: 14.9 mm Length: 16.2 mm Width: 5.65 mm
Brand: STMicroelectronics
Current continuous collector: 8 A
Pd - Power dissipation: 50 W

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